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SRAM
Austin Semiconductor, Inc. 16K x 4 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY SPECIFICATIONS
* SMD 5962-86859 * MIL-STD-883
MT5C6405
PIN ASSIGNMENT (Top View)
24-Pin DIP (C) (300 MIL)
A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ OE\ Vss 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 Vcc A4 A3 A2 A1 A0 NC DQ4 DQ3 DQ2 DQ1 WE\
FEATURES
* High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns * Battery Backup: 2V data retention * High-performance, low-power CMOS double-metal process * Single +5V (+10%) Power Supply * Easy memory expansion with CE\ * All inputs and outputs are TTL compatible
28-Pin LCC (EC)
A5 NC NC Vcc NC
3 2 1 28 27
OPTIONS
* Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access * Package(s) Ceramic DIP (300 mil) Ceramic LCC
MARKING
-12 -15 -20 -25 -35 -45* -55* -70*
A6 4 A7 5 A8 6 A9 7 A10 8 A11 9 A12 10 A13 11 CE\ 12
26 25 24 23 22 21 20 19 18
NC A4 A3 A2 A1 A0 DQ4 DQ3 DQ2
13 14 15 16 17
DQ1 WE\ NC Vss OE\
C EC
No. 106 No. 204
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
* Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT * 2V data retention/low power L
*Electrical characteristics identical to those provided for the 35ns access devices.
For more products and information please visit our web site at www.austinsemiconductor.com
MT5C6405 Rev. 2.1 06/05
1
SRAM
Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM
VCC GND
MT5C6405
A A A A A A A A A
D
ROW DECODER I/O CONTROL
Q
1,048,576-BIT MEMORY ARRAY
CE\
(LSB) OE\ COLUMN DECODER (LSB) POWER DOWN
WE\
A AAAAAAAAA
TRUTH TABLE
MODE STANDBY READ READ WRITE OE\ X L H X CE\ H L L L WE\ X H H L DQ HIGH-Z Q HIGH-Z D POWER STANDBY ACTIVE ACTIVE ACTIVE
MT5C6405 Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS* Voltage on any Input or DQ Relative to Vss....-0.5V to +7.0V1 Storage Temperature......................................-65oC to +150oC Power Dissipation.................................................................1W Max Junction Temperature..................................................+175C Lead Temperature (soldering 10 seconds)........................+260oC Short Circuit Output Current...........................................20mA
1 All voltage referenced to Vss.
MT5C6405
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage
CONDITIONS
SYM VIH VIL
MIN 2.2 -0.5 -10 -10 2.4
MAX Vcc+0.5V 0.8 10 10
UNITS NOTES V V A A V 1 1 1 1, 2
0V < VIN < VCC Outputs Disabled 0V < VOUT < VCC IOH = -4.0mA IOL = 8.0mA
ILI ILO VOH VOL
0.4
MAX -20 110
V
PARAMETER Power Supply Current: Operating Power Supply Current: Standby
CONDITIONS CE\ < VIL; VCC = MAX Output Open CE\ > VIH; VCC = MAX f = 0 Hz CE\ > (VCC -0.2); VCC = MAX All Other Inputs < 0.2V or > (VCC - 0.2V), f = 0 Hz
SYM Icc
-12 140
-15 125
-25 100
-35 90
UNITS NOTES mA 3
ISBT1
50
45
40
35
30
mA
ISBC2
25
25
25
25
25
mA
CAPACITANCE
DESCRIPTION Input Capacitance Output Capacitance CONDITIONS TA = 25 C, f = 1MHz Vcc = 5V
o
SYM CI CO
MAX 8 10
UNITS pF pF
NOTES 4 4
MT5C6405 Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
Austin Semiconductor, Inc.
MT5C6405
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Chip Enable to power-up time Chip disable to power-down time Output Enable access time Output Enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z -12 -15 -20 -25 -35 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tPU tPD tAOE tLZOE tHZOE tWC tCW tAW tAS tAH tWP tDS tDH tLZWE tHZWE 12 12 12 2 2 7 0 12 6 0 6 12 10 10 0 0 10 7 0 2 0 15 12 12 0 0 12 8 0 2 0 0 7 20 15 15 0 0 15 10 0 2 0 0 15 7 0 8 25 20 20 0 0 20 12 0 2 0 2 2 8 0 20 8 0 10 35 25 25 0 0 25 15 0 2 0 15 15 15 2 2 10 0 25 10 8 15 20 20 20 2 2 12 0 35 15 25 25 25 2 2 15 35 35 35 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
7 6, 7
6
6
7
8
10
15
7 6, 7
MT5C6405 Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
Austin Semiconductor, Inc.
+5V AC TEST CONDITIONS
Input pulse levels ...................................... Vss to 3.0V Input rise and fall times ......................................... 5ns Input timing reference levels ................................ 1.5V Output reference levels ....................................... 1.5V Output load ................................. See Figures 1 and 2
MT5C6405
+5V 480 480 Q 255 5 pF
Q 255 30pF
Fig. 1 Output Load Equivalent
Fig. 2 Output Load Equivalent
NOTES
1. 2. 3. All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) 4. This parameter is guaranteed but not tested. 5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. 6. tHZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured 200mV typical from steady state voltage, allowing for actual tester RC time constant.
At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enables are held in their active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time. 12. CE2 timing is the same as CE1\ timing. The waveform is inverted.
7.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION VCC for Retention Data CE\ > (VCC - 0.2V) Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time VIN > (VCC - 0.2V) or < 0.2V VCC = 2V ICCDR 1 mA CONDITIONS SYM VDR MIN 2 MAX --UNITS V NOTES
tCDR tR
0 tRC
---
ns ns
4 4, 11
LOW Vcc DATA RETENTION WAVEFORM
VCC
t CDR DATA RETENTION MODE 4.5V VDR > 2V 4.5V tR
CE\
MT5C6405 Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
432 4321 4321 1 4321
321 321 321 321
VIH VIL
V DR
4326 321154321 87 4216 332154321 326 87 421154321 321154321 87 3326 487
987654321 987654321 4321 321 987654321 987654321
DON'T CARE UNDEFINED
SRAM
Austin Semiconductor, Inc.
MT5C6405
READ CYCLE NO. 1 8, 9
ttRC RC
ADDRESS
VALID
ttAA AA t OH tOH
DQ
PREVIOUS DATA VALID DATA VALID
READ CYCLE NO. 2 7, 8, 10
ttRC RC
CE\
ttAOE AOE
tLZOE OE\
tLZOE
HZOE tHZOE
t
ttLZCE LZCE tACE tACE
DQ
HIGH-Z
tHZCE tHZCE
DATA VALID
t PU tPU
Icc
ttPD PD
MT5C6405 Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
4321 4321 4321
4321 1 4321 4321 432
DON'T CARE
UNDEFINED
SRAM
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12 (Chip Enabled Controlled)
WC tWC
MT5C6405
t
ADDRESS
tAW tAW tAS tAS
CE\ WE\
tCW tCW t WP tWP1 tDS tDS
AH tAH
t
DQ D
Q
DATA VAILD
Q
HIGH-Z HIGH Z
WRITE CYCLE NO. 2 7, 12, 13 (Write Enabled Controlled)
tWC tWC
ADDRESS
tAW tAW tCW tCW t AH tAH
CE\
tAS tAS
t WP tWP1 tDS t DH tDH
WE\
DQ D Q Q
DATA VALID
HIGH-Z
HIGH-Z
5 3 21 44321 4321 1 4321 432
NOTE: Output enable (OE\) is inactive (HIGH).
MT5C6405 Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
321098765432109876543211 1 2 32109876543210987654321 1 32109876543210987654321
098765432121098765432109876543210987654321 098765432121098765432109876543210987654321
t DH tDH DON'T CARE
54321 54321 54321
2109876543210987654321 1 2109876543210987654321 1 987654321 987654321 987654321 116543210987654321 27 1 1 27 176543210987654321 21654321098765432
UNDEFINED
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #106 (Package Designator C) SMD 5962-86859, Case Outline L
MT5C6405
D A
Q
E S1 b2 e b
L
eA c
SYMBOL A b b2 c D E eA e L Q S1
SMD SPECIFICATIONS MIN MAX --0.200 0.014 0.026 0.045 0.065 0.008 0.018 --1.280 0.220 0.310 0.300 BSC 0.100 BSC 0.125 0.200 0.015 0.060 0.005 ---
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C6405 Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #204 (Package Designator EC) SMD 5962-86859, Case Outline U
D1 B2 D2 L2
MT5C6405
E3
e E E1 E2
h x 45o D hx45o D3 A1 A L B1
SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L2
SMD SPECIFICATIONS MIN MAX 0.060 0.075 0.050 0.065 0.022 0.028 0.072 REF 0.342 0.358 0.200 BSC 0.100 BSC --0.358 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C6405 Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
Austin Semiconductor, Inc.
MT5C6405
ORDERING INFORMATION
EXAMPLE: MT5C6405C-25L/XT Package Speed Options** Process Type ns C C C C C C C C -12 -15 -20 -25 -35 -45 -55 -70 L L L L L L L L /* /* /* /* /* /* /* /* EXAMPLE: MT5C6405EC-15L/IT Package Speed Options** Process Type ns EC EC EC EC EC EC EC EC -12 -15 -20 -25 -35 -45 -55 -70 L L L L L L L L /* /* /* /* /* /* /* /*
Device Number MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405
Device Number MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405
*AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing ** OPTIONS L = 2V Data Retention/Low Power
-40oC to +85oC -55oC to +125oC -55oC to +125oC
MT5C6405 Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
SRAM
Austin Semiconductor, Inc.
MT5C6405
ASI TO DSCC PART NUMBER CROSS REFERENCE*
ASI Package Designator C
ASI Part # MT5C6805C-35/883C MT5C6805C-35L/883C MT5C6805C-45/883C MT5C6805C-45L/883C MT5C6805C-55/883C MT5C6805C-55L/883C MT5C6805C-70/883C MT5C6805C-70L/883C SMD Part # 5962-8685918LA 5962-8685917LA 5962-8685916LA 5962-8685915LA 5962-8685914LA 5962-8685913LA 5962-8685912LA 5962-8685911LA
ASI Package Designator EC
ASI Part # MT5C6805EC-35/883C MT5C6805EC-35L/883C MT5C6805EC-45/883C MT5C6805EC-45L/883C MT5C6805EC-55/883C MT5C6805EC-55L/883C MT5C6805EC-70/883C MT5C6805EC-70L/883C SMD Part # 5962-8685918UA 5962-8685917UA 5962-8685916UA 5962-8685915UA 5962-8685914UA 5962-8685913UA 5962-8685912UA 5962-8685911UA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C6405 Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11

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